This paper circulates around the core theme of Solid State Devices together with its essential aspects. It has been reviewed and purchased by the majority of students thus, this paper is rated 4.8 out of 5 points by the students. In addition to this, the price of this paper commences from £ 99. To get this paper written from the scratch, order this assignment now. 100% confidential, 100% plagiarism-free.
How you can create a tensile and compressive stressor layer of Si3N4 using PECVD method? What is the scientific formulation behind that?
2. In the classroom, we discussed about a Professor whose research has produced the maximum number of a specific thin film deposition source material. Go to that Professor`s website and make a comprehensive list of the source materials (it can be liquid, gas, solid) and identify them as metal, dielectric or semiconductor.
3. Write 3 examples of tertiary thin films made with sputtering process. Bonus 2 points for 2 more examples with the highest number of elements alloyed through sputtering process.
4. Give an example of a epitaxial thin film which can be grown by MOCVD and MBE both. Then compare them using manufacturability yardstick. Now we have discussed a few times in the classroom regarding what constitutes manufacturability.