This paper circulates around the core theme of 1. [2 x 10 pts] Find the Req for the following 32 nm transistors, using Req data from the following table. together with its essential aspects. It has been reviewed and purchased by the majority of students thus, this paper is rated 4.8 out of 5 points by the students. In addition to this, the price of this paper commences from £ 99. To get this paper written from the scratch, order this assignment now. 100% confidential, 100% plagiarism-free.
1. [2 x 10 pts] Find the Req for the following 32 nm transistors, using Req data from the following table. Assume all transistors are minimum length (L = 2 λ = 32 nm). Table of equivalent resistance Req (W/L= 1) of NMOS and PMOS transistors in a fictitious 32 nm process (with L = Lmin) at different operating voltages. For larger devices, divide Req by W/L. VDD (V) 0.8 0.9 1.0 1.1 NMOS (kW) 5 3 2.5 2.4 PMOS (kW) 16 8 6 5 a. NMOS, W = 6 λ in series with an NMOS, W = 16 λ, Vdd = 0.9 V b. PMOS, W = 12 λ in parallel with a PMOS, W = 4 λ, Vdd = 1.1 V 2. [10 pts] All transistors in a 45 nm CMOS 4-input NOR gate are 6 λ wide and 2 λ long. Calculate the capacitance of a single input if Cox = 65 fF/nm2 and CO = 4 fF/nm. 3. [2 x 10 pts] Calculate the output (junction) capacitance for the following 32 nm CMOS gates. For an NMOS assume: Cj = 26 fF/nm2 and Cjsw = 3 fF/nm, and for PMOS assume: Cj = 23 fF/nm2 and Cjsw = 2.6 fF/nm. Use LD = 5 nm. Assume minimum length transistors, and no shared diffusion between transistors. a. Inverter: PMOS W = 6 λ, NMOS W = 4 λ b. 2-input NAND: PMOS W = 6 λ, NMOS W = 8 λ 4. [15+15 pts] A copper wire is formed into the shape shown below and has an R = 1.41667 x 10-4 W/. Since techniques to calculate the resistance of a corner are complex, approximate the resistance by calculating a reasonable lower bound and upper bound resistance between points A and B. Explain your
